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| Specification Comparison Vishay Siliconix SI5404BDC vs. Si5404DC Description: N-Channel, 2.5-V (G-S) MOSFET Package: 1206-8 ChipFETr Pin Out: Identical Part Number Replacements: SI5404BDC-T1 Replaces Si5404DC-T1 SI5404BDC-T1--E3 (Lead (Pb)-Free version) Replaces Si5404DC-T1--E3 Summary of Performance: The SI5404BDC is the replacement for the original Si5404DC; both parts perform identically including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD Tj and Tstg RthJA SI5404BDC 20 "12 7.5 5.4 20 2.1 2.5 1.3 -55 to 150 50 Si5404DC 20 "12 7.2 5.2 20 2.1 2.5 1.3 -55 to 150 50 Unit V A W _C _C/W Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) SI5404BDC Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Drain Source On Resistance Forward Transconductance Diode Forward Voltage VGS = 4.5 V VGS = 4.5 V VGS = 2.5 V VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD 20 0.022 0.031 26 0.7 0.028 0.039 0.6 1.5 "100 1 20 0.016 0.038 20 0.8 1.2 0.019 0.045 0.6 "100 1 V nA mA A W S V Si5404DC Max Min Typ Max Unit Symbol Min Typ Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Qg Qgs Qgd Rg 7 1.7 2 1.7 11 12 2.4 3.2 NS* W 18 nC Switching Turn-On Time Turn-Off Turn Off Time Source-Drain Reverse Recovery Time *NS denotes parameter not specified in original data sheet. Document Number: 73275 05-Jan-05 www.vishay.com td(on) tr td(off) tf trr 12 12 25 10 20 20 20 40 20 40 20 40 40 15 30 30 60 60 23 60 ns 1 |
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